English

New, low-cost, and high-efficiency photonic integrated circuits

212
2024-05-10 15:41:16
See translation

The rapid development of photonic integrated circuits (PICs) has combined multiple optical devices and functions on a single chip, completely changing optical communication and computing systems.



For decades, silicon-based PICs have dominated the field due to their cost-effectiveness and integration with existing semiconductor manufacturing technologies, despite their limitations in electro-optic modulation bandwidth. Nevertheless, silicon optical transceiver chips on insulators have been successfully commercialized, driving information flow through millions of glass fibers in modern data centers.

Recently, the lithium niobate wafer platform on insulators has become a high-quality material for photonic integrated electro-optic modulators due to its strong Pockels coefficient, which is crucial for high-speed optical modulation. However, high costs and complex production requirements have hindered the wider adoption of lithium niobate, limiting its commercial integration.

Lithium tantalate (LiTaO 3) is a close relative of lithium niobate and has the potential to overcome these obstacles. It has similar excellent electro-optical quality, but has advantages in scalability and cost compared to lithium niobate, as it has been widely used in 5G RF filters in the telecommunications industry.

Now, scientists led by Professor Tobias J. Kippenberg from the Federal Institute of Technology in Lausanne and Professor Ou Xin from the Shanghai Institute of Microsystems and Information Technology (SIMIT) have created a new type of PIC platform based on lithium tantalate. PIC utilizes the inherent advantages of materials to make high-quality PIC more economically feasible, thereby changing the field. This breakthrough was published in the journal Nature.

Researchers have developed a lithium tantalate wafer bonding method that is compatible with silicon on insulator production lines. Then, they covered the thin film lithium tantalate chip with diamond-like carbon and continued to etch the optical waveguide, modulator, and ultra-high quality factor microresonator.

Etching is achieved by combining deep ultraviolet (DUV) lithography with dry etching technology, which was originally developed for lithium niobate and then carefully adjusted to etch harder and more inert lithium tantalate. This adjustment involves optimizing etching parameters to minimize optical losses, which is a key factor in achieving high-performance photonic circuits.

Through this method, the team was able to manufacture efficient lithium tantalate PIC with an optical loss rate of only 5.6 dB/m at telecommunication wavelengths. Another highlight is the electro-optic Mach Zehnder modulator (MZM), which is a widely used device in high-speed fiber optic communication today. The half wave voltage length product of lithium tantalate MZM is 1.9 V cm, and the electro-optic bandwidth reaches 40 GHz.
"While maintaining efficient electro-optical performance, we have also generated soliton micro combs on this platform," said Chengli Wang, the first author of the study. "These soliton micro combs have a large number of coherent frequencies, making them particularly suitable for applications such as parallel coherent lidar and photon computing when combined with electro-optical modulation functions."

The birefringence (dependence of refractive index on optical polarization and propagation direction) of lithium tantalate PIC is reduced, enabling dense circuit configurations and ensuring broad operational capabilities in all telecommunications frequency bands. This work paves the way for the scalable, cost-effective manufacturing of advanced optoelectronic PICs.

Source: Laser Net

Related Recommendations
  • Laser induced 2D material modification: from atomic scale to electronic scale

    Background IntroductionTwo dimensional materials have attracted widespread attention due to their atomic level thickness and unique properties, such as high binding energy, tunable bandgap, and new electronic degrees of freedom (valley electronics). They have many application prospects in fields such as microelectronics, nanophotonics, and nanoenergy. Various two-dimensional materials have their o...

    2024-02-23
    See translation
  • 150 kW Ultra High Power Laser Sensor Released

    Recently, MKS announced the launch of a brand new Ophir ® A 150 kW ultra-high power laser sensor designed specifically for measuring ultra-high power levels up to 150 kW. This sensor has excellent accuracy and reliability, suitable for industrial and defense fields.This water-cooled calorimeter has a working wavelength range of 900-1100 nm and can measure power from 10 kW to 150 kW. Its extremely ...

    2024-12-27
    See translation
  • Significant progress made in 808nm high-power semiconductor laser chips

    The R&D team of Xi'an Lixin Optoelectronics Technology Co., Ltd. (hereinafter referred to as "Lixin Optoelectronics") has made significant progress in 808nm high-power semiconductor laser chips through continuous technological breakthroughs.808nm semiconductor laser, as an ideal and efficient solid-state laser pump source, plays an important role in advanced manufacturing, mechanical processin...

    2024-06-14
    See translation
  • MKS Malaysia Penang Supercenter Factory Holds Groundbreaking Ceremony

    Recently, MKS Instruments held a groundbreaking and celebration ceremony for its Supercenter factory in Penang, Malaysia.This important moment has been witnessed jointly by the Malaysian Investment Development Authority (MIDA) and Invest Penang, which will help meet the growing demand for semiconductor equipment for wafer manufacturing in the region and globally. This advanced factory, covering ...

    2024-11-01
    See translation
  • Allocate 10 billion US dollars! New York State to Build NA Extreme UV Lithography Center

    On December 11th local time, New York State announced a partnership with companies such as IBM, Micron, Applied Materials, and Tokyo Electronics to jointly invest $10 billion to expand the Albany NanoTech Complex in New York State, ultimately transforming it into a high numerical aperture extreme ultraviolet (NA EUV) lithography center to support the development of the world's most complex and pow...

    2023-12-15
    See translation