Ελληνικά

Shanghai Institute of Optics and Mechanics proposes a new scheme of Er doped silicate fiber as an extended L-band broadband amplifier

723
2024-06-05 15:03:58
Δείτε τη μετάφραση

Recently, Hu Lili, a research group of the Advanced Laser and Optoelectronic Functional Materials Department of the Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, proposed a new scheme based on field strength optimization of Er doped silicate fiber as an extended L-band broadband amplifier. Relevant research achievements were published in Optics Letters under the title of "Er doped silicate fiber amplifiers in the L-band with flat gain".

The rapid development of big data and artificial intelligence has put forward higher requirements for the capacity of dense wave division multiplexers (DWDMs) in the new generation of optical communication systems. Compared to the mature C-band (1530-1565nm) erbium-doped fiber amplifier (EDFA), the L-band (1565-1625nm) EDFA has become a new generation of scalable optical communication products. However, the development of L-band EDFA faces difficulties and challenges: the gain of Er-doped fibers is limited by low longwave emission cross-sections and severe excited state absorption, resulting in very small gains for wavelengths greater than 1600nm. Therefore, how to improve the long wave gain of Er doped fiber materials is a key scientific problem that urgently needs to be solved in L-band broadband amplifiers.

The research team proposes a new scheme of micro ion field emphasis control to enhance the gain and spectral shaping of Er ions in a silicate fiber matrix. The feasibility of using silicate optical fibers as long wave gain enhancing substrates for Er ions has been confirmed both theoretically and experimentally. This scheme has achieved significant improvement in L-band gain and optimization of gain flatness in Er doped silicate optical fibers. At the same time, by adopting an all fiber scheme with heterogeneous fiber fusion, only a 1.5m long silicate fiber is used. At the longest wavelength of 1625nm in the L-band, the gain coefficient is 4.7dB/m, which is better than the 0.3dB/m of quartz fiber. In addition, the gain flatness of the fiber in the L-band is 0.8dB, which is better than the 5dB of quartz fiber. Compared to quartz fiber, this fiber has a higher doping concentration, shorter usage length, and larger gain coefficient, providing key material support for the new generation of L-band EDFA.

This work has received support from the National Natural Science Foundation of China and national key projects.


Figure 1: L-band gain of Er doped silicate optical fiber

Source: Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences

Σχετικές προτάσεις
  • AMCM 8 laser M 8K metal 3D printing equipment is about to be launched, equipped with 8 lasers

    In October 2023, Germany's AMCM (EOS, a global technology leader in industrial grade additive manufacturing) announced the upcoming launch of the M 8K metal 3D printing equipment. The device will be equipped with 8 lasers, with a construction volume of 800 x 800 x 1200 millimeters, nearly four times the size of AMCM's previously launched M 4K metal 3D printing device on the market.ArianeGroup's ho...

    2023-10-19
    Δείτε τη μετάφραση
  • BOFA launches the latest generation of high-temperature 3D printing filtration technology

    BOFA has consolidated its position as a market leader in additive manufacturing of portable smoke and particle filtration systems with the latest generation of 3D PrintPRO technology designed specifically for high-temperature processes.3D PrintPRO HT focuses on the 230V market and can filter high-temperature particles, gases, and nanoparticles emitted during polymer processing in the printing room...

    2024-04-15
    Δείτε τη μετάφραση
  • The Boston University research team developed a high-throughput single-cell sorting technique based on stimulated Raman spectroscopy

    A Boston University research project has successfully developed an innovative single-cell sorting technique that uses stimulated Raman spectroscopy to replace traditional fluorescent labeling and achieve labeling free and non-destructive single-cell measurements. This technology is expected to have a profound impact in the fields of cytology, microbiology and biomedical research, allowing scienti...

    2023-09-07
    Δείτε τη μετάφραση
  • UK venture capital group acquires MicroLED developer Plessey

    Haylo Labs, a UK company recently established by former WaveOptics CEO David Hayes, has acquired microLED developer Plessey Semiconductors.Haylo says it also plans to invest more than £100 million scaling Plessey’s production capacity over the next five years at the firm’s GaN-on-silicon site in Plymouth and beyond, in anticipation of fast-growing demand for augmented and virtual reality (AR/VR) a...

    09-01
    Δείτε τη μετάφραση
  • In the development of modern electronic welding technology, the application advantages of laser soldering process

    With the rapid development of modern electronic information technology, integrated circuit chip packaging forms are also emerging in an endless stream, and the package density is getting higher and higher, which greatly promotes the development of electronic products to multi-function, high performance, high reliability and low cost.So far, through hole technology (THT) and surface mount technolog...

    2023-09-13
    Δείτε τη μετάφραση