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国内自主研发首套碳化硅晶锭激光剥离设备投产

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2024-08-26 11:51:40
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       近日，从江苏通用半导体有限公司传来消息，由该公司自主研发的国内首套的8英寸碳化硅晶锭激光全自动剥离设备正式交付碳化硅衬底生产领域头部企业广州南砂晶圆半导体技术有限公司，并投入生产。

 



图：8英寸SiC晶锭激光全自动剥离设备
       该设备可实现6英寸和8英寸碳化硅晶锭的全自动分片，包含晶锭上料、晶锭研磨、激光切割、晶片分离和晶片收集，一举填补了国内碳化硅晶锭激光剥离设备领域研发、制造的市场空白，突破了国外的技术封锁，将极大地提升我国碳化硅芯片产业的自主化、产业化水平。

       该设备年可剥离碳化硅衬底20000片，实现良率95％以上，与传统的线切割工艺相比，大幅降低了产品损耗，而设备售价仅仅是国外同类产品的1／3。

       近年来，碳化硅功率器件在大功率半导体市场中所占的份额不断提高，并被广泛应用于新能源汽车、城市轨道交通、风力发电、高速移动、物联网等一系列领域。

       但是，由于材料的高硬度、高脆性的特点，在使用传统的砂浆线、金刚石线等冷切工艺切割、剥离碳化硅晶锭时，存在效率过低、损耗过高的缺点，导致衬底产能提升过慢，远远不能满足市场的实际需求。由于产能严重不足，碳化硅衬底的生产成本一直居高不下，在器件成本构成中，碳化硅器件中衬底要占成本的47％，远远高于硅基器件的7％。

       江苏通用半导体有限公司董事长陶为银介绍，采用基于激光工具和加工技术切割、剥离碳化硅晶锭，可实现高效、精确和高质量的制造，极大地降低碳化硅衬底的生产成本，减少浪费和环境影响。

       碳化硅器件属于宽禁带半导体，不但在民用领域应用广泛，在国防领域也普遍应用。因此对相关技术，西方发达国家都实行出口管制。目前，只有一家日本企业生产制造碳化硅晶锭激光剥离设备，售价高达一亿元，且对中国实施禁售。

       江苏通用半导体有限公司成立于2019年，致力于高端半导体产业装备与材料的研发和制造，于2020年推出国内首台半导体激光隐形切割机；2022年成功推出国内首台18纳米及以下SDBG激光隐切设备（针对3D Memory）；2024年研制成功SDTT激光隐切设备（针对3D HBM）。

来源：中企网

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